Two-dimensional confinement effects in gate-all-around (GAA) MOSFETS

被引：13

作者：

Baie, X ^{[1
]}

Colinge, JP ^{[1
]}

机构：

[1] Catholic Univ Louvain, DICE, B-1348 Louvain, Belgium

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 04期

关键词：

D O I：

10.1016/S0038-1101(98)00061-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-dimensional electron confinement effects have been modeled and experimentally observed in silicon-on-insulator (SOI) gate-all-around (GAA) MOSFETs. Solving the Poisson and Schrodinger equations in a self-consistent manner provides the electron wave functions and the energy levels within the device channel. The variation of these energy levels, as well as the electron concentration profile, have been computed as a function of gate voltage. Transconductance fluctuations are observed as new energy levels become populated. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：499 / 504

页数：6

共 7 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].