Consideration of the validity of the 14 valence electron rule for semiconducting chimney-ladder phase compounds

被引:43
作者
Imai, Y [1 ]
Watanabe, A [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan
关键词
intermetallics; miscellaneous; electronic structure; calculation;
D O I
10.1016/j.intermet.2004.08.010
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electronic structure calculations for compounds known as Nowotny chimney-ladder (CL) phases have been performed to ascertain an empirical rule that CL compounds with a valence electron concentration (VEC) of 14 are a semiconductors. RuGa2 and RuAl2 which have a TiSi2-type structure, a prototype of the CL phase, with a VEC value of 14 are indirect-gap semiconductors with estimated band gaps of 0.235 and 0.20 eV, respectively. Ru2Si3 and Ru2Ge3 With VEC = 14 are predicted to be direct-gap semiconductors but the band gap decrease in the heavier elements results in closure of the gap in Ru2Sn3. Ir3Ga5 and Ir4Ge5 will be metallic or semimetallic though their VEC values are 14. The Fermi level of Mn11Si19, whose VEC is slightly smaller than 14, is located just before the gap and seems not to be inconsistent with p-type semiconducting behavior. The Fermi levels of Rh10Ga17 and Rh17Ge22 whose VECs exceed 14 are located past the gap. Cr(11)Gei(19) and Mo13Ge23, whose VECs are smaller than 14 would be metallic. These results show that the above rule is a rather good criterion for exploration of semiconducting chimney-ladder phase compounds but compounds with VEC = 14 are not always semiconductors. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:233 / 241
页数:9
相关论文
共 29 条
  • [1] [Anonymous], 1991, PEARSONS HDB CRYSTAL
  • [2] Thermoelectric properties of Ru2Si3 prepared by spark plasma sintering method
    Arita, Y
    Mitsuda, S
    Matsui, T
    [J]. JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY, 2002, 69 (03) : 821 - 830
  • [3] STRUCTURE AND BONDING IN CRYSTALLINE BORON AND B12C3
    BULLETT, DW
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (03): : 415 - 426
  • [4] Growth and some properties of Cr11Ge19
    Caillat, T
    Fleurial, JP
    Borshchevsky, A
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 1997, 252 (1-2) : 12 - 15
  • [5] SEMICONDUCTING BEHAVIOR OF RUGA2
    EVERS, J
    OEHLINGER, G
    MEYER, H
    [J]. MATERIALS RESEARCH BULLETIN, 1984, 19 (09) : 1177 - 1180
  • [6] Electronic properties of isostructural ruthenium and osmium silicides and germanides
    Filonov, AB
    Migas, DB
    Shaposhnikov, VL
    Dorozhkin, NN
    Borisenko, VE
    Heinrich, A
    Lange, H
    [J]. PHYSICAL REVIEW B, 1999, 60 (24) : 16494 - 16498
  • [7] CRYSTAL STRUCTURE OF MN15SI26 (MANGANESE SILICIDES OF MNNSI2N-M TYPE)
    FLIEHER, G
    VOLLENKL.H
    NOWOTNY, H
    [J]. MONATSHEFTE FUR CHEMIE, 1967, 98 (06): : 2173 - &
  • [8] STRUCTURAL AND ELECTRONIC TRANSPORT-PROPERTIES OF RESI2-DELTA SINGLE-CRYSTALS
    GOTTLIEB, U
    LAMBERTANDRON, B
    NAVA, F
    AFFRONTE, M
    LABORDE, O
    ROUAULT, A
    MADAR, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 3902 - 3907
  • [9] Optical characterization of Ru2Si3 by spectroscopic ellipsometry, UV-VIS-NIR spectroscopy and band structure calculations
    Henrion, W
    Rebien, M
    Antonov, VN
    Jepsen, O
    Lange, H
    [J]. THIN SOLID FILMS, 1998, 313 : 218 - 221
  • [10] HYDE BG, 1989, INROGANIC CRYSTAL ST, P306