Silicon-based metal-semiconductor-metal detectors

被引：5

作者：

Buchal, C ^{[1
]}

Loken, M ^{[1
]}

机构：

[1] Forschungszentrum Julich, ISI, IT, D-52425 Julich, Germany

来源：

MRS BULLETIN | 1998年 / 23卷 / 04期

关键词：

D O I：

10.1557/S088376940003027X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：55 / 59

页数：5

共 25 条

[1] A 75 GHZ SILICON METAL-SEMICONDUCTOR-METAL SCHOTTKY PHOTODIODE
ALEXANDROU, S
WANG, CC
HSIANG, TY
LIU, MY
CHOU, SY
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (20) : 2507 - 2509
[2] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
AUSTON, DH
JOHNSON, AM
SMITH, PR
BEAN, JC
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 371 - 373
[3] PROBING SEMICONDUCTORS WITH FEMTOSECOND PULSES
AUSTON, DH
[J]. PHYSICS TODAY, 1990, 43 (02) : 46 - 54
[4] OPTIMIZATION OF HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
BURM, J
LITVIN, KI
SCHAFF, WJ
EASTMAN, LF
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (06) : 722 - 724
[5] High-efficiency and high-speed silicon metal-semiconductor-metal photodetectors operating in the infrared
Chen, EL
Chou, SY
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (06) : 753 - 755
[6] COLACE L, 1998, MAT DEVICES SILICON, V486
[7] Fabrication and performance characteristics of high-speed ion-implanted Si metal-semiconductor-metal photodetectors
Dutta, NK
Nichols, DT
Jacobson, DC
Livescu, G
[J]. APPLIED OPTICS, 1997, 36 (06): : 1180 - 1184
[8] INFRARED RESPONSE FROM METALLIC PARTICLES EMBEDDED IN A SINGLE-CRYSTAL SI MATRIX - THE LAYERED INTERNAL PHOTOEMISSION SENSOR
FATHAUER, RW
IANNELLI, JM
NIEH, CW
HASHIMOTO, S
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (14) : 1419 - 1421
[9] High-speed and high-sensitivity silicon-on-insulator metal-semiconductor-metal photodetector with trench structure
Ho, JYL
Wong, KS
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (01) : 16 - 18
[10] HSIANG TY, 1993, P SOC PHOTO-OPT INS, V2022, P76, DOI 10.1117/12.158589

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