Highly end-doped silicon nanowires for field-effect transistors on flexible substrates

被引：9

作者：

Celle, Caroline ^{[1
]}

Carella, Alexandre ^{[1
]}

Mariolle, Denis ^{[2
]}

Chevalier, Nicolas ^{[2
]}

Rouviere, Emmanuelle ^{[1
]}

Simonato, Jean-Pierre ^{[1
]}

机构：

[1] CEA, LITEN DTNM LCRE, F-38054 Grenoble 9, France

[2] CEA, LETI MINATEC, F-38054 Grenoble 9, France

来源：

NANOSCALE | 2010年 / 2卷 / 05期

关键词：

SELF-ASSEMBLED MONOLAYER; THIN-FILM TRANSISTORS; ORGANIC TRANSISTORS; CHANNEL-LENGTH; ELECTRONICS; VOLTAGE; GROWTH; LIMITS;

D O I：

10.1039/b9nr00314b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on the VLS (vapour-liquid-solid) fabrication and characterization of in situ axially doped silicon nanowires (SiNWs) at both ends, and on their integration into a bottom gate-top contact geometry on both rigid and flexible substrates to realize field-effect transistors (FETs). To improve contact resistance between SiNWs and source/drain electrodes, we axially tuned the level of doping at both ends of the SiNWs by sequential in situ addition of PH3. Characterisation of SiNWs by scanning spreading resistance microscopy in the device configuration allowed us to determine precisely the different sections of the SiNWs. The transfer to flexible substrates still allowed for workable FET structures. Transistors with electron mobilities exceeding 120 cm(2) V-1 s(-1), I-on/I-off ratios greater than 10(7) and ambipolar behaviour were achieved.

引用

页码：677 / 680

页数：4

共 36 条

[1] Scanning photocurrent imaging and electronic band studies in silicon nanowire field effect transistors [J].