Room temperature CW operation of GaN-based blue laser diodes by GaInN/GaN optical guiding layers

GaN-based shea wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, minor facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm(2)). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.