Synergistic effects of implanted helium and hydrogen and the effect of irradiation temperature on the microstructure of SiC/SiC composites

被引：43

作者：

Taguchi, T ^{[1
]}

Igawa, N

Miwa, S

Wakai, E

Jitsukawa, S

Snead, LL

Hasegawa, A

机构：

[1] Japan Atom Energy Res Inst, Neutron Sci Res Ctr, Tokai, Ibaraki 3191195, Japan

[2] Tohoku Univ, Dept Quantum Sci & Energy Engn, Sendai, Miyagi 9808579, Japan

[3] Japan Atom Energy Res Inst, Dept Mat Sci, Tokai, Ibaraki 3191195, Japan

[4] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF NUCLEAR MATERIALS | 2004年 / 335卷 / 03期

关键词：

D O I：

10.1016/j.jnucmat.2004.08.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microstructure of near-stoichiometric fiber SiC/SiC composites implanted with He and H ions was studied at implantation temperatures of 1000 and 1300degreesC. The average size of He bubbles in the CVI SiC matrix decreases with increasing concentration of implanted H ions. Moreover, the number density of He bubbles increases with increasing irradiation temperature and amount of implanted H. At the irradiation temperature of 1000degreesC, He bubbles were mainly formed at grain boundary within the matrix. On the other hand, He bubbles were formed both at grain boundaries and within grains at the irradiation temperature of 1300degreesC. The average size of He bubbles at grain boundaries was much larger than within the grain. The average size of He bubbles in the fiber was smaller than that in the matrix in all cases. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：508 / 514

页数：7

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