Study on a PECVD SiC-coated pressure sensor

被引：26
作者：
Zhang, Haixia [1 ]
Guo, Hui [1 ]
Wang, Yu [1 ]
Zhang, Guobing [1 ]
Li, Zhihong [1 ]
机构：
[1] Peking Univ, Inst Microelect, Natl Key Lab Nano Microfabricat Technol, Beijing 100871, Peoples R China
来源：
JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2007年 / 17卷 / 03期
关键词：
D O I：
10.1088/0960-1317/17/3/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a PECVD silicon carbide (SiC) thin film which served as an anti-erosion protective layer for a pressure sensor is reported. Compared with an unprotected sample, influences of the SiC coating layer on properties of the pressure sensor, including sensitivity, temperature coefficient, chemical stability and long-term stability, were investigated. The results showed that the PECVD SiC layer decreased sensitivity by 11%, but it remarkably decreased the temperature coefficient by 20 - 70%. The PECVD SiC-coated pressure sensor was still intact after 20 min KOH etching, whereas the unprotected one was completely destroyed within 1 min. Therefore, this PECVD SiC-coated pressure sensor can not only work in erosive environments, but also has good sensitivity, high reliability and less temperature dependence.
引用
收藏
页码：426 / 431
页数：6
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