Fast PEALD ZnO Thin-Film Transistor Circuits

被引：78

作者：

Mourey, Devin A. ^{[1
,2
]}

Zhao, Dalong A. ^{[3
,4
]}

Sun, Jie ^{[3
,4
]}

Jackson, Thomas N. ^{[3
,4
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Mat Sci & Engn, Mat Res Inst, University Pk, PA 16802 USA

[3] Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA

[4] Penn State Univ, Dept Elect Engn, Mat Res Inst, University Pk, PA 16802 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 02期

关键词：

Oxide thin-film transistors (TFTs); plasma-enhanced atomic layer deposition (PEALD); thin-film circuits; ZnO;

D O I：

10.1109/TED.2009.2037178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report stable high-mobility ZnO thin-film transistors (TFTs) and fast circuits fabricated using a novel weak reactant plasma-enhanced atomic layer deposition (PEALD) process. This PEALD process is a highly scalable manufacturable process and is a faster and simpler alternative to conventional atomic layer deposition. Using PEALD, we have deposited highly crystalline (002) textured ZnO thin films at a low temperature (200 degrees C). Using PEALD ZnO films, we have fabricated high-mobility TFTs (20-30 cm(2)/V . s), which have < 100-mV threshold voltage shifts after bias stress at 80 degrees C for 20 000 s. Using these high-performance TFTs, we have also fabricated simple 15-stage ring oscillator circuits with a propagation delay of 22 ns/stage for a supply voltage of 16 V, which, to the best of our knowledge, are the fastest ZnO TFT circuits reported to date.

引用

页码：530 / 534

页数：5

共 9 条

[1] Microwave ZnO thin-film transistors [J].