Lateral growth rate enhancement on patterned GaAs substrates with CCl4 by MOCVD

We have investigated the CCl4 doping effect during MOCVD on patterned GaAs substrate. It was shown that the CCl4 now rate was a very important parameter which enhanced the lateral growth rate of GaAs/AlGaAs on patterned substrates. With supplying of CCl4, the increase of GaAs lateral growth rate was remarkable and the increment could be described as a linear function of CCl4 flow rate. The lateral growth rate increased up to 700 degrees C, but it decreased for more elevated growth temperature. With increasing the V/III ratio, the lateral growth rate increased, but at higher V/III ratio the increment seems to be saturated. This novel characteristics can be utilized in fabricating very novel quantum wire Like structure.