Electrocatalytic reduction of N2 and nitrogen-incorporation process on dopant-free defect graphene

被引:32
作者
Du, Yanqiu [1 ]
Jiang, Cheng [1 ]
Xia, Wei [1 ]
Song, Li [1 ]
Li, Peng [1 ]
Gao, Bin [1 ]
Wu, Chao [1 ]
Sheng, Lei [1 ]
Ye, Jinhua [2 ]
Wang, Tao [1 ]
He, Jianping [1 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Jiangsu Key Lab Electrochem Energy Storage Techno, 29 Yudao St, Nanjing 210016, Peoples R China
[2] Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
基金
中国国家自然科学基金;
关键词
AMBIENT CONDITIONS; AMMONIA-SYNTHESIS; DOPED CARBON; PERFORMANCE; NANOSHEETS; CATALYST; NITRIDE; XPS;
D O I
10.1039/c9ta10071g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electrochemical reduction of N-2 to NH3 under ambient conditions is a promising N-2 fixation method, which provides a new technical solution to remedy the limitations of the Haber-Bosch process. Defect engineering is considered an inspiring strategy for strong N-2 activation. Herein, we demonstrate the reduction of N-2 on dopant-free defect graphene, which was prepared via the molten salt method. Systematic experiments and density functional theory calculation revealed that the defect sites are the unique active sites for nitrogen adsorption and activation. The phenomenon of N incorporation into graphene using the product NH3 from the NRR as the N source has never been reported before. This was thoroughly studied in this study, and thus serves as a unique perspective to illustrate the significance of defect sites in activating N-2.
引用
收藏
页码:55 / 61
页数:7
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