Topology-induced thermal rectification in carbon nanodevice

被引：41

作者：

Jiang, J. W. ^{[1
,2
]}

Wang, J. S. ^{[1
,2
]}

Li, B. ^{[1
,2
,3
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Natl Univ Singapore, Ctr Computat Sci & Engn, Singapore 117542, Singapore

[3] NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore

来源：

EPL | 2010年 / 89卷 / 04期

关键词：

MOLECULAR-DYNAMICS; STATE;

D O I：

10.1209/0295-5075/89/46005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The thermal rectification (TR) effect in a topological system, Mobius graphene strip, is studied by nonequilibrium molecular-dynamics simulation with Nose-Hoover heat baths. Due to the nonlinear interaction in graphene and the topological asymmetry of the Mobius strip, the TR phenomenon emerges and the value of TR can be as large as 120%. This topology-induced TR is not very sensitive to the temperature and size of the system; while the position of heat bath is important, since it can induce additional asymmetry. Copyright (C) EPLA, 2010

引用

页数：4

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