Fractional quantum Hall effect in a dilute magnetic semiconductor

被引：23

作者：

Betthausen, C. ^{[1
]}

Giudici, P. ^{[1
]}

Iankilevitch, A. ^{[1
]}

Preis, C. ^{[1
]}

Kolkovsky, V. ^{[2
]}

Wiater, M. ^{[2
]}

Karczewski, G. ^{[2
]}

Piot, B. A. ^{[3
]}

Kunc, J. ^{[3
]}

Potemski, M. ^{[3
]}

Wojtowicz, T. ^{[2
]}

Weiss, D. ^{[1
]}

机构：

[1] Univ Regensburg, Dept Expt & Appl Phys, D-93040 Regensburg, Germany

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, France

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 11期

关键词：

COMPOSITE FERMIONS; SPIN;

D O I：

10.1103/PhysRevB.90.115302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the observation of the fractional quantum Hall effect in the lowest Landau level of a two-dimensional electron system (2DES), residing in the diluted magnetic semiconductor Cd1-xMnxTe. The presence of magnetic impurities results in a giant Zeeman splitting leading to an unusual ordering of composite fermion Landau levels. In experiment, this results in an unconventional opening and closing of fractional gaps around the filling factor nu = 3/2 as a function of an in-plane magnetic field, i.e., of the Zeeman energy. By including the s-d exchange energy into the composite Landau level spectrum the opening and closing of the gap at filling factor 5/3 can be modeled quantitatively. The widely tunable spin-splitting in a diluted magnetic 2DES provides a means to manipulate fractional states.

引用

页数：4

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