Charge smoothening and band flattening due to Hartree corrections in twisted bilayer graphene

被引:71
作者
Rademaker, Louk [1 ]
Abanin, Dmitry A. [1 ]
Mellado, Paula [2 ]
机构
[1] Univ Geneva, Dept Theoret Phys, CH-1211 Geneva, Switzerland
[2] Univ Adolfo Ibanez, Sch Engn & Sci, Santiago 7941169, Chile
基金
瑞士国家科学基金会; 美国国家科学基金会;
关键词
SUPERCONDUCTIVITY;
D O I
10.1103/PhysRevB.100.205114
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Doping twisted bilayer graphene away from charge neutrality leads to an enormous buildup of charge inhomogeneities within each moire unit cell. Here, we show, using unbiased real-space self-consistent Hartree calculations on a relaxed lattice, that Coulomb interactions smoothen this charge imbalance by changing the occupation of earlier identified "ring" orbitals in the AB/BA region and "center" orbitals at the AA region. For hole doping, this implies an increase of the energy of the states at the Gamma point, leading to a further flattening of the flat bands and a pinning of the Van Hove singularity at the Fermi level. The charge smoothening will affect the subtle competition between different possible correlated phases.
引用
收藏
页数:6
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