Electronic structure of the Zn(O,S)/Cu(In,Ga)Se2 thin-film solar cell interface

被引:29
作者
Mezher, Michelle [1 ]
Garris, Rebekah [2 ]
Mansfield, Lorelle M. [2 ]
Horsley, Kimberly [1 ]
Weinhardt, Lothar [1 ,3 ,4 ,5 ]
Duncan, Douglas A. [1 ]
Blum, Monika [1 ]
Rosenberg, Samantha G. [1 ]
Baer, Marcus [1 ,6 ,7 ]
Ramanathan, Kannan [2 ]
Heske, Clemens [1 ,3 ,4 ,5 ]
机构
[1] Univ Nevada, Dept Chem & Biochem, 4505 S Maryland Pkwy,Box 454003, Las Vegas, NV 89154 USA
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
[3] Karlsruhe Inst Technol, Inst Photon Sci & Synchrotron Radiat IPS, D-76344 Eggenstein Leopoldshafen, Germany
[4] Karlsruhe Inst Technol, ANKA Synchrotron Radiat Facil, D-76344 Eggenstein Leopoldshafen, Germany
[5] Karlsruhe Inst Technol, Inst Chem Technol & Polymer Chem, D-76128 Karlsruhe, Germany
[6] Helmholtz Zentrum Berlin Mat & Energie GmbH, Renewable Energy, D-14109 Berlin, Germany
[7] Brandenburg Tech Univ Cottbus Senftenberg, Inst Phys & Chem, D-03046 Cottbus, Germany
来源
PROGRESS IN PHOTOVOLTAICS | 2016年 / 24卷 / 08期
关键词
chalcopyrite thin-film solar cell; band alignment; alternative buffer layers; Zn(O; S); X-ray spectroscopy; inverse photoemission; CHEMICAL BATH DEPOSITION; BAND ALIGNMENT; JUNCTION FORMATION; ZN(O; S); IMPACT; LAYER; GAP;
D O I
10.1002/pip.2764
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se-2 interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se-2 system, we find an essentially flat (small-spike) conduction band alignment (here: a conduction band offset of (0.09 +/- 0.20)eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high-efficiency Zn(O,S)-based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH)(2), and possibly ZnSe. Copyright (c) 2016 John Wiley & Sons, Ltd.
引用
收藏
页码:1142 / 1148
页数:7
相关论文
共 39 条
[1]   The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface -: Impact of post-annealing [J].
Baer, M. ;
Ennaoui, A. ;
Klaer, J. ;
Saez-Araoz, R. ;
Kropp, T. ;
Weinhardt, L. ;
Heske, C. ;
Schock, H. -W. ;
Fischer, Ch. -H. ;
Lux-Steiner, M. C. .
CHEMICAL PHYSICS LETTERS, 2006, 433 (1-3) :71-74
[2]   Chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers [J].
Baer, M. ;
Repins, I. ;
Contreras, M. A. ;
Weinhardt, L. ;
Noufi, R. ;
Heske, C. .
APPLIED PHYSICS LETTERS, 2009, 95 (05)
[3]   Depth-resolved band gap in Cu(In,Ga)(S,Se)2 thin films [J].
Bar, M. ;
Nishiwaki, S. ;
Weinhardt, L. ;
Pookpanratana, S. ;
Fuchs, O. ;
Blum, M. ;
Yang, W. ;
Denlinger, J. D. ;
Shafarman, W. N. ;
Heske, C. .
APPLIED PHYSICS LETTERS, 2008, 93 (24)
[4]  
Briggs D., 1990, Practical surface analysis, V2nd
[5]  
Contreras MA, 2003, WORL CON PHOTOVOLT E, P570
[6]  
Contreras MA, 1999, PROG PHOTOVOLTAICS, V7, P311, DOI 10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO
[7]  
2-G
[8]   Low resistivity cubic phase CdS films by chemical bath deposition technique [J].
DEMELO, O ;
HERNANDEZ, L ;
ZELAYAANGEL, O ;
LOZADAMORALES, R ;
BECERRIL, M ;
VASCO, E .
APPLIED PHYSICS LETTERS, 1994, 65 (10) :1278-1280
[9]   VUV ISOCHROMAT SPECTROMETER FOR SURFACE-ANALYSIS [J].
DENNINGER, G ;
DOSE, V ;
SCHEIDT, H .
APPLIED PHYSICS, 1979, 18 (04) :375-380
[10]   X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSIS OF COPPER AND ZINC-OXIDES AND SULFIDES [J].
DEROUBAIX, G ;
MARCUS, P .
SURFACE AND INTERFACE ANALYSIS, 1992, 18 (01) :39-46