The Graphene Structure's Effects on the Current-Voltage and Photovoltaic Characteristics of Directly Synthesized Graphene/n-Si(100) Diodes

被引：9

作者：

Jankauskas, Sarunas ^{[1
]}

Gudaitis, Rimantas ^{[1
]}

Vasiliauskas, Andrius ^{[1
]}

Guobiene, Asta ^{[1
]}

Meskinis, Sarunas ^{[1
]}

机构：

[1] Kaunas Univ Technol, Inst Mat Sci, K Barsausko St 59, LT-51423 Kaunas, Lithuania

来源：

NANOMATERIALS | 2022年 / 12卷 / 10期

关键词：

graphene; MW-PECVD; photovoltaics; HETEROJUNCTION SOLAR-CELLS; SCHOTTKY-BARRIER; WORK FUNCTION; EFFICIENCY; SI; STRAIN; PERFORMANCE; TRANSPORT; LAYER; METALLIZATION;

D O I：

10.3390/nano12101640

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Graphene was synthesized directly on Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW-PECVD). The effects of the graphene structure on the electrical and photovoltaic properties of graphene/n-Si(100) were studied. The samples were investigated using Raman spectroscopy, atomic force microscopy, and by measuring current-voltage (I-V) graphs. The temperature of the hydrogen plasma annealing prior to graphene synthesis was an essential parameter regarding the graphene/Si contact I-V characteristics and photovoltaic parameters. Graphene n-type self-doping was found to occur due to the native SiO2 interlayer at the graphene/Si junction. It was the prevalent cause of the significant decrease in the reverse current and short-circuit current. No photovoltaic effect dependence on the graphene roughness and work function could be observed.

引用

页数：19

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