Substrate temperature dependence of structural, morphological and Optical properties of Sn4Sb6S13 thin films deposited by vacuum thermal evaporation

被引:18
作者
Harizi, A. [1 ]
Ben Rabeh, M. [1 ]
Laatar, F. [2 ]
Akkari, F. Chaffar [1 ]
Kanzari, M. [1 ,3 ]
机构
[1] ENIT Univ Tunis El Manar, Lab Photovolta & Mat Semicond, BP 37, Tunis 1002, Tunisia
[2] Ctr Rech Energie & Technol Borj Cedria, Lab Photovolta, Route Tourist Soliman,BP 95, Hammam Lif 2050, Tunisia
[3] Univ Tunis, Inst Preparatoire Etud Ingn Tunis Montfleury, Tunis, Tunisia
关键词
Thin films; Vapor deposition; Optical properties; X-Ray diffraction; Raman spectroscopy; X-RAY-DIFFRACTION; ELECTRICAL-PROPERTIES; CONSTANTS; RAMAN; SEMICONDUCTORS; SULFOSALTS; SYSTEM; MODEL;
D O I
10.1016/j.materresbull.2016.02.043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, structural and morphological properties of Sn4Sb6S13 thin films grown by single source thermal evaporation were investigated. The films were deposited onto glass substrates heated in the temperature range 30-200 degrees C then characterized by XRD, AFM, SEM and Raman spectroscopy. The films are preferentially oriented along the ((6) over bar 11) plane. Analysis of the surface morphology reveals that the films had an average roughness increasing from 2.81 to 8.23 nm as the substrate temperature increases from 30 to 200 degrees C. The variations of the microstructural parameters, such as crystallite size (D), dislocation density (delta), the number of crystallites per unit area (N), the stacking fault probability (P) and strain (epsilon) with substrate temperature were investigated. Raman measurement was used to obtain more information about structural changes of Sn4Sb6S13 films. The optical parameters were deduced by using Forouhi-Bloomer models. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:52 / 62
页数:11
相关论文
共 58 条
[11]   Preparation of SnS films using solid sources deposited by the PECVD method with controllable film characters [J].
Cheng, L. L. ;
Liu, M. H. ;
Wang, M. X. ;
Wang, S. C. ;
Wang, G. D. ;
Zhou, Q. Y. ;
Chen, Z. Q. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 545 :122-129
[12]   Structural characterization of lead sulfide thin films by means of X-ray line profile analysis [J].
Choudhury, N. ;
Sarma, B. K. .
BULLETIN OF MATERIALS SCIENCE, 2009, 32 (01) :43-47
[13]   CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].
DAVIS, EA ;
MOTT, NF .
PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&
[14]   Investigations on chemical bath deposited cadmium selenide thin films [J].
Dhanam, M. ;
Prabhu, Rajeev R. ;
Manoj, P. K. .
MATERIALS CHEMISTRY AND PHYSICS, 2008, 107 (2-3) :289-296
[15]   Sulfosalts - A new class of compound semiconductors for photovoltaic applications [J].
Dittrich, Herbert ;
Bieniok, Anna ;
Brendel, Uwe ;
Grodzicki, Michael ;
Topa, Dan .
THIN SOLID FILMS, 2007, 515 (15) :5745-5750
[16]   Progress in sulfosalt research [J].
Dittrich, Herbert ;
Stadler, Andreas ;
Topa, Dan ;
Schimper, Hermann-Josef ;
Basch, Angelika .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (05) :1034-1041
[17]   CuInS2 thin films for solar cell applications [J].
Djessas, K ;
Massé, G ;
Ibannaim, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (04) :1235-1239
[18]   Effect of air annealing on dispersive optical constants and electrical properties of SnSb2S4 thin films [J].
Fadhli, Y. ;
Rabhi, A. ;
Kanzari, M. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 26 :282-287
[19]   Growth and post-annealing effect on the properties of the new sulfosalt SnSb2S4 thin films [J].
Gassoumi, A. ;
Kanzari, M. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 44 (01) :71-74
[20]   Photovoltaic materials, history, status and outlook [J].
Goetzberger, A ;
Hebling, C ;
Schock, HW .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2003, 40 (01) :1-46