Residual stress measurement in a metal microdevice by micro Raman spectroscopy

Large residual stress induced during the electroforming process cannot be ignored to fabricate reliable metal microdevices. Accurate measurement is the basis for studying the residual stress. Influenced by the topological feature size of micron scale in the metal microdevice, residual stress in it can hardly be measured by common methods. In this manuscript, a methodology is proposed to measure the residual stress in the metal microdevice using micro Raman spectroscopy (MRS). To estimate the residual stress in metal materials, micron sized beta-SiC particles were mixed in the electroforming solution for codeposition. First, the calculated expression relating the Raman shifts to the induced biaxial stress for beta-SiC was derived based on the theory of phonon deformation potentials and Hooke's law. Corresponding micro electroforming experiments were performed and the residual stress in Ni-SiC composite layer was both measured by x-ray diffraction (XRD) and MRS methods. Then, the validity of the MRS measurements was verified by comparing with the residual stress measured by XRD method. The reliability of the MRS method was further validated by the statistical student's t-test. The MRS measurements were found to have no systematic error in comparison with the XRD measurements, which confirm that the residual stresses measured by the MRS method are reliable. Besides that, the MRS method, by which the residual stress in a micro inertial switch was measured, has been confirmed to be a convincing experiment tool for estimating the residual stress in metal microdevice with micron order topological feature size.