Thin films of 5% Co-doped ZnO with a range of Al codoping exhibit a band-edge shift, which varies with carrier concentration as n(2/3). Carrier effective mass is 0.26m(e) and mobility is similar to 10 cm(2) V-1 s(-1). The doped films, which contain coherent Co clusters of 4-8 nm in size, exhibit a ferromagnetic moment of 0.3-1.0 mu(B) per cobalt. The magnetism is progressively destroyed by Al doping due to a reduction in Co-cluster formation. Magnetoresistance appears below 30 K, but these materials cannot be regarded as dilute magnetic semiconductors. (c) 2007 American Institute of Physics.
机构:
Beihang Univ, Ctr Mat Phys & Chem, Beijing 100083, Peoples R ChinaBeihang Univ, Ctr Mat Phys & Chem, Beijing 100083, Peoples R China
Li, Jian-jun
Hao, Wei-chang
论文数: 0引用数: 0
h-index: 0
机构:
Beihang Univ, Ctr Mat Phys & Chem, Beijing 100083, Peoples R China
Tokyo Inst Technol, Dept Met & Ceram Sci, Tokyo 1528552, JapanBeihang Univ, Ctr Mat Phys & Chem, Beijing 100083, Peoples R China
Hao, Wei-chang
Xu, Huai-zhe
论文数: 0引用数: 0
h-index: 0
机构:
Beihang Univ, Sch Sci, Beijing 100083, Peoples R ChinaBeihang Univ, Ctr Mat Phys & Chem, Beijing 100083, Peoples R China
Xu, Huai-zhe
Wang, Tian-min
论文数: 0引用数: 0
h-index: 0
机构:
Beihang Univ, Ctr Mat Phys & Chem, Beijing 100083, Peoples R ChinaBeihang Univ, Ctr Mat Phys & Chem, Beijing 100083, Peoples R China
Wang, Tian-min
Shi, Ji
论文数: 0引用数: 0
h-index: 0
机构:
Tokyo Inst Technol, Dept Met & Ceram Sci, Tokyo 1528552, JapanBeihang Univ, Ctr Mat Phys & Chem, Beijing 100083, Peoples R China