Optical and structural characterization of a GaN/GaAlN laser heterostructure grown by metalorganic chemical vapor deposition

被引：0

作者：

Usikov, AS ^{[1
]}

Lundin, WV ^{[1
]}

Ushakov, UI ^{[1
]}

Pushnyi, BV ^{[1
]}

Faleev, NN ^{[1
]}

Sakharov, AV ^{[1
]}

Shubina, TV ^{[1
]}

Toropov, AA ^{[1
]}

Davidov, VY ^{[1
]}

Zadiranov, YM ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PROCEEDINGS OF THE SECOND SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES | 1998年 / 97卷 / 34期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Growth and characterization of undoped GaN/GaAIN heterostructure with thick GaAIN lower barrier layer was performed. Utilization of thick GaAIN layer and GaN/GaAIN interfaces was found to reduce defects density in the upper layer. Lasing emission under conditions of optical pumping was obtained both at 77K and at room temperature for cleaved facets samples with thresholds of 35 kW/cm(2) and 85 kW/cm(2), respectively.

引用

页码：63 / 68

页数：6