Preparation and optical properties of higher manganese silicide, (Mn,Fe)Siγ, thin films

被引：4

作者：

Hayashi, Kei ^{[1
]}

Ishii, Kentaro ^{[1
]}

Kawasaki, Chihiro ^{[1
]}

Honda, Ryosuke ^{[1
]}

Miyazaki, Yuzuru ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan

来源：

APPLIED SURFACE SCIENCE | 2018年 / 458卷

关键词：

Higher manganese silicide; Fe substitution; Electronic structure; Pulsed laser deposition; Epitaxial growth; Optical absorption; SEMICONDUCTING PROPERTIES; CRYSTAL-STRUCTURE;

D O I：

10.1016/j.apsusc.2018.07.141

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this article, the optical properties of thin films of higher manganese silicide (HMS) systems, MnSi gamma and (Mn,Fe) Si-gamma, were investigated. Band structure calculations were performed using the Mn11Si19 and (Mn31/44Fe13/ (44))(11)Si-19 crystal structure models of HMS to predict the conduction types and band gaps of MnSi gamma and Mn0.7Fe0.3Si gamma, respectively. Using a pulsed laser deposition method, p-type MnSi gamma and n-type Mn0.7Fe0.3Si gamma thin films with a-axis orientation were grown on R-sapphire substrates. The measured direct band gaps were 0.81(1) eV for the MnSi gamma thin film and 0.83(2) eV for the Mn0.7Fe0.3Si gamma thin film. These results demonstrate the potential of (Mn,Fe)Si-gamma-based near-infrared absorption solar cells.

引用

页码：700 / 704

页数：5

共 50 条

[1] Study of the electrophysical properties of higher manganese silicide (Mn4Si7) thin films and their temperature dependence [J].

Bekpulatov, I. R. ;

Imanova, G. T. ;

Nabiev, D. Kh ;

Igamov, B. D. ;

Kamardin, A. I. ;

Jabarov, S. H. ;

Aliyev, Y. I. .

CERAMICS INTERNATIONAL, 2025, 51 (14) :19145-19155

[2] Ultrahigh vacuum deposition of higher manganese silicide Mn4Si7 thin films [J].

Dulal, Rajendra P. ;

Dahal, Bishnu R. ;

Pegg, Ian L. ;

Philip, John .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (06)

[3] Improved thermoelectric properties of Fe doped Si-rich higher manganese silicide [J].

Saminathan, Madhuvathani ;

Muthiah, Saravanan ;

Ravi, Lokeswaran ;

Bhui, Animesh ;

Rameshan, Reeshma ;

Ravikirana ;

Perumal, Suresh .

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2022, 284

[4] Formation, optical properties and electronic structure of thin Yb silicide films on Si(111) [J].

Galkin, NG ;

Maslov, AM ;

Polyarnyi, VO .

FUNDAMENTAL PROBLEMS OF OPTOELECTRONICS AND MICROELECTRONICS II, 2005, 5851 :373-380

[5] Preparation of Higher Manganese Silicide (HMS) bulk and Fe-containing HMS bulk using a Na-Si Melt and their thermoelectrical properties [J].

Yamada, Takahiro ;

Miyazaki, Yuzuru ;

Yamane, Hisanori .

THIN SOLID FILMS, 2011, 519 (24) :8524-8527

[6] PREPARATION OF N-TYPE HIGHER MANGANESE SILICIDE FILMS BY MAGNETRON SPUTTERING [J].

Hou, Q. R. ;

Zhao, W. ;

Chen, Y. B. ;

He, Y. J. .

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2009, 23 (16) :3331-3348

[7] Effects of Si content on phase composition and thermoelectric properties of higher manganese silicide [J].

Luo Wen-Hui ;

Li Han ;

Lin Ze-Bing ;

Tang Xin-Feng .

ACTA PHYSICA SINICA, 2010, 59 (12) :8783-8788

[8] The effect of base pressure and manganese oxidation on preparation of Mn3O4 and higher manganese silicide [J].

Pan, Wangheng ;

Zhang, Jinmin ;

Feng, Lei ;

Xie, Jie ;

Xiao, Qingquan ;

Xie, Quan .

MATERIALS RESEARCH EXPRESS, 2020, 7 (10)

[9] Thermoelectric properties of higher manganese silicide films deposited by radio frequency magnetron co-sputtering [J].

Joo, Sung-Jae ;

Lee, Ho Seong ;

Lee, Ji Eun ;

Jang, Jeongin .

JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 747 :603-610

[10] Synchronized enhancement of thermoelectric properties of higher manganese silicide by introducing Fe and Co nanoparticles [J].

Kim, Gwansik ;

Kim, Hyun-Sik ;

Lee, Ho Seong ;

Kim, Jeongmin ;

Lee, Kyu Hyoung ;

Roh, Jong Wook ;

Lee, Wooyoung .

NANO ENERGY, 2020, 72

← 1 2 3 4 5 →