Preparation and optical properties of higher manganese silicide, (Mn,Fe)Siγ, thin films

被引：4
|
作者：
Hayashi, Kei [1 ]
Ishii, Kentaro [1 ]
Kawasaki, Chihiro [1 ]
Honda, Ryosuke [1 ]
Miyazaki, Yuzuru [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
来源：
APPLIED SURFACE SCIENCE | 2018年 / 458卷
关键词：
Higher manganese silicide; Fe substitution; Electronic structure; Pulsed laser deposition; Epitaxial growth; Optical absorption; SEMICONDUCTING PROPERTIES; CRYSTAL-STRUCTURE;
D O I：
10.1016/j.apsusc.2018.07.141
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this article, the optical properties of thin films of higher manganese silicide (HMS) systems, MnSi gamma and (Mn,Fe) Si-gamma, were investigated. Band structure calculations were performed using the Mn11Si19 and (Mn31/44Fe13/ (44))(11)Si-19 crystal structure models of HMS to predict the conduction types and band gaps of MnSi gamma and Mn0.7Fe0.3Si gamma, respectively. Using a pulsed laser deposition method, p-type MnSi gamma and n-type Mn0.7Fe0.3Si gamma thin films with a-axis orientation were grown on R-sapphire substrates. The measured direct band gaps were 0.81(1) eV for the MnSi gamma thin film and 0.83(2) eV for the Mn0.7Fe0.3Si gamma thin film. These results demonstrate the potential of (Mn,Fe)Si-gamma-based near-infrared absorption solar cells.
引用
收藏
页码：700 / 704
页数：5
相关论文
共 50 条
  • [1] Ultrahigh vacuum deposition of higher manganese silicide Mn4Si7 thin films
    Dulal, Rajendra P.
    Dahal, Bishnu R.
    Pegg, Ian L.
    Philip, John
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (06):
  • [2] Improved thermoelectric properties of Fe doped Si-rich higher manganese silicide
    Saminathan, Madhuvathani
    Muthiah, Saravanan
    Ravi, Lokeswaran
    Bhui, Animesh
    Rameshan, Reeshma
    Ravikirana
    Perumal, Suresh
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2022, 284
  • [3] Formation, optical properties and electronic structure of thin Yb silicide films on Si(111)
    Galkin, NG
    Maslov, AM
    Polyarnyi, VO
    FUNDAMENTAL PROBLEMS OF OPTOELECTRONICS AND MICROELECTRONICS II, 2005, 5851 : 373 - 380
  • [4] Preparation of Higher Manganese Silicide (HMS) bulk and Fe-containing HMS bulk using a Na-Si Melt and their thermoelectrical properties
    Yamada, Takahiro
    Miyazaki, Yuzuru
    Yamane, Hisanori
    THIN SOLID FILMS, 2011, 519 (24) : 8524 - 8527
  • [5] PREPARATION OF N-TYPE HIGHER MANGANESE SILICIDE FILMS BY MAGNETRON SPUTTERING
    Hou, Q. R.
    Zhao, W.
    Chen, Y. B.
    He, Y. J.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2009, 23 (16): : 3331 - 3348
  • [6] Effects of Si content on phase composition and thermoelectric properties of higher manganese silicide
    Luo Wen-Hui
    Li Han
    Lin Ze-Bing
    Tang Xin-Feng
    ACTA PHYSICA SINICA, 2010, 59 (12) : 8783 - 8788
  • [7] The effect of base pressure and manganese oxidation on preparation of Mn3O4 and higher manganese silicide
    Pan, Wangheng
    Zhang, Jinmin
    Feng, Lei
    Xie, Jie
    Xiao, Qingquan
    Xie, Quan
    MATERIALS RESEARCH EXPRESS, 2020, 7 (10)
  • [8] Thermoelectric properties of higher manganese silicide films deposited by radio frequency magnetron co-sputtering
    Joo, Sung-Jae
    Lee, Ho Seong
    Lee, Ji Eun
    Jang, Jeongin
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 747 : 603 - 610
  • [9] Synchronized enhancement of thermoelectric properties of higher manganese silicide by introducing Fe and Co nanoparticles
    Kim, Gwansik
    Kim, Hyun-Sik
    Lee, Ho Seong
    Kim, Jeongmin
    Lee, Kyu Hyoung
    Roh, Jong Wook
    Lee, Wooyoung
    NANO ENERGY, 2020, 72 (72)
  • [10] A first-principles study of the electronic structure and point defects in higher manganese silicide Mn4Si7
    Chai, Jun
    Li, Guangshu
    He, Mingping
    Shen, Hangjia
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2024, 26 (36) : 23722 - 23729
12345