RF circuit performance degradation due to hot carrier effects and soft breakdown

被引：0
作者：
Xiao, EJ [1 ]
Yuan, JS [1 ]
机构：
[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Chip Design & Reliabil Lab, Orlando, FL 32816 USA
来源：
2002 45TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL I, CONFERENCE PROCEEDINGS | 2002年
关键词：
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
A methodology to systematically study hot carrier and soft breakdown effects on RE circuits is proposed, and verified with a 2.45GHz low noise amplifier (LNA) and a 1 GHz voltage controlled oscillator (VCO). MOSFETs of 0.16 mum technology are stressed, and DC and RE parameters are extracted and used for BERT and SpectreRF simulations to give RE circuit performance degradations due to HC and SBD effects with respect to operation time. Design guidelines for more reliable RF circuits are given after simulation and analysis.
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页码：17 / 20
页数：4
相关论文
共 5 条
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  • [3] Takeda E., 1995, Hot-carrier effects in MOS devices
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  • [5] 1999, BERT MANUALS
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