Investigation of Correlation between Device Structures and Switching Losses of IGBTs

被引：0

作者：

Machida, Satoru ^{[1
]}

Sugiyama, Takahide ^{[1
]}

Ishiko, Masayasu ^{[1
]}

Yasuda, Satoshi ^{[2
]}

Saito, Jun ^{[2
]}

Hamada, Kimimori ^{[2
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

[2] Toyota Motor Co Ltd, Aichi 4700309, Japan

来源：

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2009年

关键词：

GATE; MOSFET;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This study investigated the correlation between the device structures and the switching power dissipation by using an index, the ratio of feedback capacitance to input capacitance. We point out that a wide-cell-pitch and an injection enhanced structure have inherently higher switching power dissipation under the fitted dV/dt and dI/dt condition because of their large index.

引用

页码：136 / +

页数：2

共 9 条

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