Emerging Resistive Switching Memory Technologies: Overview and Current Status

被引：0
作者：
Marinella, Matthew J. [1 ]
机构：
[1] Sandia Natl Labs, Adv Semicond Device R&D, Albuquerque, NM 87185 USA
来源：
2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2014年
关键词：
redox memory; RRAM; ReRAM; nonvolatile memory; memristor; CBRAM; MECHANISMS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Resistive memory technologies, in particular redox random access memory (ReRAM), are poised as one of the most prominent emerging memory categories to replace NAND flash and fill the important need for a Storage Class Memory (SCM). This is due to low switching energy, low current switching, high speed, outstanding endurance, scalability below 10 nm, and excellent back-end-of-line CMOS compatibility. Furthermore, the analog aspects of memristors have opened the door for many novel applications such as analog math accelerators and neuromorphic computers. This paper provides an overview of resistive memory technologies and their current status, with a focus on redox RAM (ReRAM).
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收藏
页码：830 / 833
页数：4
相关论文
共 37 条
  • [1] Spike-timing dependent plasticity in a transistor-selected resistive switching memory
    Ambrogio, S.
    Balatti, S.
    Nardi, F.
    Facchinetti, S.
    Ielmini, D.
    [J]. NANOTECHNOLOGY, 2013, 24 (38)
  • [2] [Anonymous], NANOELECTRONICS INFO
  • [3] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
    Baek, IG
    Lee, MS
    Seo, S
    Lee, MJ
    Seo, DH
    Suh, DS
    Park, JC
    Park, SO
    Kim, HS
    Yoo, IK
    Chung, UI
    Moon, JT
    [J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 587 - 590
  • [4] Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
    Balatti, S.
    Larentis, S.
    Gilmer, D. C.
    Ielmini, D.
    [J]. ADVANCED MATERIALS, 2013, 25 (10) : 1474 - 1478
  • [5] Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon
    Chai, Yang
    Wu, Yi
    Takei, Kuniharu
    Chen, Hong-Yu
    Yu, Shimeng
    Chan, Philip C. H.
    Javey, Ali
    Wong, H. -S. Philip
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (11) : 3933 - 3939
  • [6] Chanthbouala A, 2012, NAT NANOTECHNOL, V7, P101, DOI [10.1038/nnano.2011.213, 10.1038/NNANO.2011.213]
  • [7] Chen A, 2015, EMERGING NANOELECTRONIC DEVICES, P1
  • [8] Chevallier Christophe J., 2010, 2010 IEEE International Solid-State Circuits Conference (ISSCC), P260, DOI 10.1109/ISSCC.2010.5433945
  • [9] Storage-class memory: The next storage system technology
    Freitas, R. F.
    Wilcke, W. W.
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2008, 52 (4-5) : 439 - 447
  • [10] Gilbert Nad, 2013, 2013 Symposium on VLSI Circuits, pC204
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