Effect of thermal annealing on the magnetic anisotropy of GaMnAs ferromagnetic semiconductor

被引：5

作者：

Jeong, Yujin ^{[1
]}

Lee, Hakjoon ^{[1
]}

Lee, Sangyeop ^{[1
]}

Yoo, Taehee ^{[1
]}

Lee, Sanghoon ^{[1
]}

Liu, X. ^{[2
]}

Furdyna, J. K. ^{[2
]}

机构：

[1] Korea Univ, Dept Phys, Seoul 136713, South Korea

[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

CURRENT APPLIED PHYSICS | 2014年 / 14卷 / 12期

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

Ferromagnetic semiconductor; Magnetic anisotropy; Planar Hall effect; GA1-XMNXAS EPITAXIAL LAYERS; CURIE-TEMPERATURE; (GA; MN)AS EPILAYER; RESISTIVITY PEAK; TRANSPORT; MN)AS;

D O I：

10.1016/j.cap.2014.10.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have systematically investigated the influence of annealing on the magnetic anisotropy properties of GaMnAs film using an epilayer with a Mn concentration of 6.2%. The GaMnAs epilayer was grown by molecular beam epitaxy and the planar Hall effect measurement was used to monitor the magnetic anisotropy of the film. We found significant annealing-induced changes in the magnetic anisotropy properties of the GaMnAs film that depended on the annealing conditions. For example, the cubic anisotropy that gave a four-fold symmetry of magnetic easy axes decreased while the uniaxial anisotropy that gave a two-fold symmetry of magnetic easy axes increases in the samples annealed temperature below 300 degrees C. In particular, the uniaxial anisotropy along the [010] direction in as-grown GaMnAs film changed to the [100] direction by rotating by 90 degrees after the sample was annealed at 300 degrees C for 3 h. This investigation thus indicates that the magnitude and the direction of the magnetic anisotropy in the GaMnAs film can be effectively controlled by choosing an appropriate annealing time and temperature. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1775 / 1778

页数：4

共 25 条

[1] Effect of low-temperature annealing on (Ga,Mn)As trilayer structures [J].