Efficient de-embedding technique for 110-GHz deep-channel-MOSFET characterization

被引：9

作者：

Andrei, Cristian ^{[1
]}

Gloria, Daniel

Danneville, Francois

Dambrine, Gilles

机构：

[1] IEMN, F-59652 Villeneuve Dascq, France

[2] STMicroelect, F-38926 Crolles, France

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2007年 / 17卷 / 04期

关键词：

circuit modeling; de-embedding; millimeter wave; measurements; MOSFET; S-parameters; transistor modeling;

D O I：

10.1109/LMWC.2007.892990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a de-embedding procedure is proposed to accurately extract the small signal equivalent circuit of advanced MOSFETs up to 110 GHz. This efficient procedure is easy to implement using only one "open" dummy structure to de-embed the external parasitics (probe pads, interconnecting transmission line, and top-down metallic interconnections and via holes) and is in particular suitable for industrial online automatic test. The method has been validated in the case of 65-nm n-MOSFETs and is proved to be efficient up to 110 GHz.

引用

页码：301 / 303

页数：3

共 6 条

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