Contact resistance between Au and solution-processed CNT

被引：8

作者：

Han, Seung Hoon ^{[1
,2
]}

Lee, Sun Hee ^{[1
,2
]}

Hur, Ji Ho ^{[1
,2
]}

Jang, Jin ^{[1
,2
]}

Park, Young-Bae ^{[3
]}

Irvin, Glen ^{[3
]}

Drzaic, Paul ^{[3
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

[2] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

[3] Unidym Inc, Menlo Pk, CA 94025 USA

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 05期

关键词：

CNT; Contact resistance; Metal; THIN-FILM-TRANSISTOR;

D O I：

10.1016/j.sse.2010.01.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the contact resistance (R-C) between Au and a solution-processed film of carbon nanotubes (CNTs). The test element group of the contact chain is modeled as a simple periodic series of resistors, the R-C represents the resistor of the Au-CNT contact. The contact resistivity (pc) was evaluated from R-C by multiplying the contact area. When the sheet resistance (R-sh) of the CNT layer is 200 Omega/sq, the rho(C) is 27 mu Omega cm(2), which is similar to 30 times of that of the Au-IZO contact at the same Rh. This is mainly due to the three-dimensional shape of the CNT surface, resulting in a smaller contact area on the flat surface of the Au. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：586 / 589

页数：4

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