Position of dangling bond states in doped a-Si:H

被引：0

作者：

Sinha, AK ^{[1
]}

Tripathi, SK ^{[1
]}

Narayana, GS ^{[1
]}

Agarwal, SC ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India

来源：

SOLID STATE PHENOMENA | 1997年 / 55卷

关键词：

a-Si : H; density of states; constant photocurrent measurement;

D O I：

10.4028/www.scientific.net/SSP.55.137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sub band gap absorption measurements have been analysed to ascertain the position of doubly occupied dangling bond states(D-) for n-type a-Si:H. We use these results to examine the validity of the two models(Street et al and Kocka et al), which give different positions of D-.

引用

页码：137 / 139

页数：3

共 6 条

[1] INTERSTITIAL DOPING OF AMORPHOUS SILICON [J].

BEYER, W ;

FISCHER, R .

APPLIED PHYSICS LETTERS, 1977, 31 (12) :850-852

[2] MEASUREMENT OF DEEP LEVELS IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT VOLTAGE SPECTROSCOPY [J].

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1983, 42 (11) :981-983

[3]

Kocka J., 1988, AMORPHOUS SILICON RE, P297

[4]

SINHA AK, 1993, INDIAN J PURE AP PHY, V31, P548

[5] EFFECTS OF DOPING ON TRANSPORT AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON [J].

STREET, RA ;

ZESCH, J ;

THOMPSON, MJ .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :672-674

[6] DENSITY OF THE GAP STATES IN UNDOPED AND DOPED GLOW-DISCHARGE A-SI-H [J].

VANECEK, M ;

KOCKA, J ;

STUCHLIK, J ;

KOZISEK, Z ;

STIKA, O ;

TRISKA, A .

SOLAR ENERGY MATERIALS, 1983, 8 (04) :411-423

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