Impact of metastable phases on electrical properties of Si with different doping concentrations after processing by high-pressure torsion

被引：15

作者：

Chon, Bumsoo ^{[1
]}

Ikoma, Yoshifumi ^{[1
]}

Kohno, Masamichi ^{[2
,3
]}

Shiomi, Junichiro ^{[4
]}

McCartney, Martha R. ^{[5
]}

Smith, David J. ^{[5
]}

Horita, Zenji ^{[1
,3
]}

机构：

[1] Kyushu Univ, Fac Engn, Dept Mat Sci & Engn, Fukuoka, Fukuoka 8190395, Japan

[2] Kyushu Univ, Fac Engn, Dept Mech Engn, Fukuoka, Fukuoka 8190395, Japan

[3] Kyushu Univ, I2CNER, Fukuoka, Fukuoka 8190395, Japan

[4] Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan

[5] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

SCRIPTA MATERIALIA | 2018年 / 157卷

基金：

日本学术振兴会;

关键词：

Severe plastic deformation; High pressure torsion; Semiconductors; Electrical properties; Metastable phases; NANOGRAINED SILICON; MICROSCOPY ANALYSIS; GERMANIUM; TRANSFORMATION; TRANSITIONS; DRIVEN; IV;

D O I：

10.1016/j.scriptamat.2018.08.011

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si (100) wafers with various doping levels were subjected to high-pressure torsion (HPT). The resistivities for all doping levels increased by one or two orders of magnitude after initial compression, but then decreased after 10 revolutions of HPT processing to similar to 0.1 Omega cm for normally and heavily doped samples, and to similar to 0.02 Omega cm for the ultraheavily doped sample. After annealing at 873 K, the resistivities increased by four orders of magnitude compared to the original Si wafers. These results indicate that the formation of metastable phases plays an important role in the electrical resistivities of HPT-processed samples. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：120 / 123

页数：4

共 33 条

[1] ELECTRICAL-PROPERTIES OF SEMIMETALLIC SILICON-III AND SEMICONDUCTIVE SILICON-IV AT AMBIENT PRESSURE [J].