Impact of metastable phases on electrical properties of Si with different doping concentrations after processing by high-pressure torsion

被引：15

作者：

Chon, Bumsoo ^{[1
]}

Ikoma, Yoshifumi ^{[1
]}

Kohno, Masamichi ^{[2
,3
]}

Shiomi, Junichiro ^{[4
]}

McCartney, Martha R. ^{[5
]}

Smith, David J. ^{[5
]}

Horita, Zenji ^{[1
,3
]}

机构：

[1] Kyushu Univ, Fac Engn, Dept Mat Sci & Engn, Fukuoka, Fukuoka 8190395, Japan

[2] Kyushu Univ, Fac Engn, Dept Mech Engn, Fukuoka, Fukuoka 8190395, Japan

[3] Kyushu Univ, I2CNER, Fukuoka, Fukuoka 8190395, Japan

[4] Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan

[5] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

SCRIPTA MATERIALIA | 2018年 / 157卷

基金：

日本学术振兴会;

关键词：

Severe plastic deformation; High pressure torsion; Semiconductors; Electrical properties; Metastable phases; NANOGRAINED SILICON; MICROSCOPY ANALYSIS; GERMANIUM; TRANSFORMATION; TRANSITIONS; DRIVEN; IV;

D O I：

10.1016/j.scriptamat.2018.08.011

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si (100) wafers with various doping levels were subjected to high-pressure torsion (HPT). The resistivities for all doping levels increased by one or two orders of magnitude after initial compression, but then decreased after 10 revolutions of HPT processing to similar to 0.1 Omega cm for normally and heavily doped samples, and to similar to 0.02 Omega cm for the ultraheavily doped sample. After annealing at 873 K, the resistivities increased by four orders of magnitude compared to the original Si wafers. These results indicate that the formation of metastable phases plays an important role in the electrical resistivities of HPT-processed samples. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：120 / 123

页数：4

共 33 条

[1] ELECTRICAL-PROPERTIES OF SEMIMETALLIC SILICON-III AND SEMICONDUCTIVE SILICON-IV AT AMBIENT PRESSURE
BESSON, JM
MOKHTARI, EH
GONZALEZ, J
WEILL, G
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (04) : 473 - 476
[2] Effects of high shearing stress combined with high hydrostatic pressure
Bridgman, PW
[J]. PHYSICAL REVIEW, 1935, 48 (10): : 825 - 847
[3] REVERSIBLE PRESSURE-INDUCED STRUCTURAL TRANSITIONS BETWEEN METASTABLE PHASES OF SILICON
CRAIN, J
ACKLAND, GJ
MACLEAN, JR
PILTZ, RO
HATTON, PD
PAWLEY, GS
[J]. PHYSICAL REVIEW B, 1994, 50 (17): : 13043 - 13046
[4] Demishev S. V., 1996, Journal of Experimental and Theoretical Physics, V82, P1159
[5] A review on high-pressure torsion (HPT) from 1935 to 1988
Edalati, Kaveh
Horita, Zenji
[J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2016, 652 : 325 - 352
[6] High-pressure torsion of titanium at cryogenic and room temperatures: Grain size effect on allotropic phase transformations
Edalati, Kaveh
Daio, Takeshi
Arita, Makoto
Lee, Seungwon
Horita, Zenji
Togo, Atsushi
Tanaka, Isao
[J]. ACTA MATERIALIA, 2014, 68 : 207 - 213
[7] Equal-Channel Angular Pressing and High-Pressure Torsion of Pure Copper: Evolution of Electrical Conductivity and Hardness with Strain
Edalati, Kaveh
Imamura, Kazutaka
Kiss, Takanobu
Horita, Zenji
[J]. MATERIALS TRANSACTIONS, 2012, 53 (01) : 123 - 127
[8] Allotropic phase transformation of pure zirconium by high-pressure torsion
Edalati, Kaveh
Horita, Zenji
Yagi, Shunsuke
Matsubara, Eiichiro
[J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2009, 523 (1-2): : 277 - 281
[9] Processing Pure Ti by High-Pressure Torsion in Wide Ranges of Pressures and Strain
Edalati, Kaveh
Matsubara, Eiichiro
Horita, Zenji
[J]. METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2009, 40A (09): : 2079 - 2086
[10] High-resolution transmission electron microscopy analysis of bulk nanograined silicon processed by high-pressure torsion
Fukushima, Yuta
Ikoma, Yoshifumi
Edalati, Kaveh
Chon, Bumsoo
Smith, David J.
Horita, Zenji
[J]. MATERIALS CHARACTERIZATION, 2017, 129 : 163 - 168

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