Stress-induced competing ferromagnetic and antiferromagnetic orders in epitaxial films of A-type antiferromagnet La0.45Sr0.55MnO3

被引:13
作者
Muduli, P. K. [1 ]
Bose, S. K. [1 ]
Budhani, R. C. [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Condensed Matter Low Dimens Syst Lab, Kanpur 208016, Uttar Pradesh, India
关键词
D O I
10.1088/0953-8984/19/22/226204
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Thin films of La0.45Sr0.55MnO3 grown epitaxially on single- crystal surfaces which offer a tensile lattice mismatch epsilon of 1.7% and 0.47% show properties similar to that of bulk La0.45Sr0.55MnO3 and Nd0.45Sr0.55MnO3 respectively. These results establish a direct correlation between a reduction in lattice expansion and contraction of the lattice by the smaller rare earth ion (Nd). The antiferromagnetic-to-ferromagnetic transition in films with the lower epsilon shifts to higher temperatures as the strain is relieved with increasing film thickness. The electrical resistivity of these films at T > TN has distinct signatures of polaronic transport whose activation energy drops from similar to 43 to similar to 31 meV on releasing the in-plane strain. The polaron activation energy is higher by a factor of two in films of similar thickness grown on the substrate which offers the larger tensile mismatch. These results show a direct correlation between polaron binding energy (E-0) and the lattice strain. The release of strain manifested by lengthening of the out-of-plane lattice parameter also makes the Neel state robust. However, an external magnetic field (H) suppresses T-N. The resistivity of the sample at this magnetic transition shows a large negative magneto-resistance and a re-entrant metallic state at T > TN in large fields (>= 3 T). The drop in polaron activation energy seen with increasing field (dE(0)/dH similar to -3.82 meV T-1) suggests a magnetic character of the polarons. The metallic antiferromagnetic state realized in epitaxial thin films of La0.45Sr0.55MnO3 makes it a candidate material for exchange biasing of the manganite-based magnetic tunnel junctions.
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页数:14
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