First demonstration of SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect

被引：18
作者：
Kim, Younghyun [1 ]
Fujikata, Junichi [2 ]
Takahashi, Shigeki [2 ]
Takenaka, Mitsuru [1 ]
Takagi, Shinichi [1 ]
机构：
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1130032, Japan
[2] PETRA, 16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan
来源：
OPTICS EXPRESS | 2016年 / 24卷 / 03期
关键词：
OPTICAL MODULATOR; HIGH-SPEED; LOW-POWER; SILICON;
D O I：
10.1364/OE.24.001979
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate a strained Si0.91Ge0.09-based carrier-injection Mach-Zehnder (MZ) optical modulator using the enhanced plasma dispersion effect in strained SiGe through mass modulation for the first time. The SiGe modulator has an injection current of 1.47 mA for a phase shift of pi which is lower than that for a Si modulator. Also, it is expected that the injection current can be further reduced by increasing the strain and Ge fraction, enabling operation at an injection current of less than 1 mA. As an example of the dynamic characteristics, 10 Gbps modulation with clear eye opening was obtained by the pre-emphasis method. (C)2016 Optical Society of America
引用
收藏
页码：1979 / 1985
页数：7
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