Broadband GaAs MESFET and GaNHEMT resistive feedback power amplifiers

被引：43

作者：

Krishnamurthy, K ^{[1
]}

Vetury, R ^{[1
]}

Keller, S ^{[1
]}

Mishra, U ^{[1
]}

Rodwell, MJW ^{[1
]}

Long, SI ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2000年 / 35卷 / 09期

关键词：

broadband amplifiers; FET circuits; power amplifiers;

D O I：

10.1109/4.868037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report 0.2 to 6-GHz MMIC power amplifiers with 12-dB gain, over 23-dBm output power, and more than 25% power-added efficiency (PAE) in a GaAs MESFET technology offering 18-GHz f(tau) and 12-V breakdown, These circuits have gain-bandwidth products of similar to 1.3.f(tau) and are more efficient than distributed power amplifiers. A first demonstration of similar circuits in GaN/AlGaN HEMT technology yielded 11-dB gain, 0.2 to 7.5-GHz bandwidth amplifiers with over 31.5-dBm output power and up to 15 % PAE. With improved devices and models we expect significantly higher power from the GaN HEMT circuits.

引用

页码：1285 / 1292

页数：8

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