Formation and characterization of SiOx nanowires and Si/SiOx core-shell nanowires via carbon-assisted growth

被引：19

作者：

Chiew, Yi L. ^{[1
]}

Cheong, Kuan Y. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Perai, Penang, Malaysia

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 05期

关键词：

Core-shell structure; Nanowire; Growth mechanism; SILICON NANOWIRES; PHOTOLUMINESCENCE;

D O I：

10.1016/j.physe.2009.11.021

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Large amount of SiOx nanowires and Si/SiOx core-shell nanowires on silicon wafer had been synthesized through carbon-assisted growth. Carbon-assisted growth was employed in this study due to the lack of contamination from metallic catalysts and cheaper raw materials. The nanowires produced had length up to 100 mu m and diameter ranging from 20 to 40 nm. In this study, increasing the growth temperature (1100, 1200 and 1300 degrees C) caused a change in the morphology of the nanowires from SiOx to Si/SiOx core-shell structures while increasing the soaking time of the heating profile (1, 2 and 4 h) increased the length of nanowires. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1338 / 1342

页数：5

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