Surface modification for epitaxial growth of single crystalline cobalt thin films with uniaxial magnetic anisotropy on GaN(0001)-1 x 1 surfaces

被引:11
作者
Li, H. D. [1 ]
He, K. [2 ]
Xie, M. H. [1 ]
Wang, N. [3 ]
Jia, J. F. [4 ]
Xue, Q. K. [4 ]
机构
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
关键词
FE; INTERFACE; PHASE; GA; CO; NUCLEATION; EVOLUTION; COSI2; NI;
D O I
10.1088/1367-2630/12/7/073007
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Epitaxial growth and magnetic properties of Co thin films on GaN(0001)-1 x 1 surfaces are studied. The films show degraded saturation magnetization due to the interfacial interaction. On excess-Ga-induced pseudo-1 x 1 surface, 30 degrees -rotation domains in the Co epilayer are inevitable and the films show in-plane magnetic anisotropy. By annealing the starting surface of pseudo-1 x 1 and to achieve a Ga-less 1 x 1 surface, single domain Co epifilms having orientations aligned with the substrate can be grown, which facilitates in-plane uniaxial magnetic anisotropy.
引用
收藏
页数:9
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