Thickness Tunable Transport Properties in MoTe2 Field Effect Transistors

被引：0
|
作者：
Zhu, Yuqi [1 ,2 ]
Zhang, Feng [1 ,2 ]
Appenzeller, Joerg [1 ,2 ]
机构：
[1] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[2] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47907 USA
来源：
2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：2
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