Atomic Layer Deposition Deposited Al-Doped ZnO Films for Transistor Application

被引：0
|
作者：
Dong, Junchen [1 ]
Li, Qi [1 ]
Han, Dedong [1 ]
Wang, Yi [1 ]
Zhang, Xing [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年
基金：
中国国家自然科学基金;
关键词：
ZnO; Thin film transistors and Atomic layer deposition; PERFORMANCE;
D O I：
10.1109/EDTM50988.2021.9420993
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we fabricate thin film transistors (TFTs) with an atomic layer deposition (ALD) deposited Aldoped ZnO (AZO) active layer, and study the effects of Al concentration (0, 2.67, 3.33, 4.00 at. %) on the device performance. The devices with a 2.67 at. % Al concentration show superior electrical properties and stability. The major parameters include a field-effect mobility of 4.99 cm(2) V(-1)s(-1), a sub-threshold swing of 134.15 mV/decade, and an on/off state current ratio over 10(6). Threshold voltage shift under negative and positive bias stress are -0.07 and 0.25 V, respectively.
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页数：3
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