Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

被引:138
作者
Xia, Xiaochuan [1 ]
Chen, Yuanpeng [1 ]
Feng, Qiuju [2 ]
Liang, Hongwei [1 ]
Tao, Pengcheng [1 ]
Xu, Mengxiang [1 ]
Du, Guotong [1 ]
机构
[1] Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China
[2] Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China
基金
中国国家自然科学基金;
关键词
GALLIUM OXIDE; PERFORMANCE;
D O I
10.1063/1.4950867
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, hexagonal structure phase-pure wide-band gap epsilon-Ga2O3 films were grown by metal organic chemical vapor deposition on 6H-SiC substrates. The epsilon-Ga2O3 films with good crystal quality were verified by high-resolution X-ray diffraction. The out-of-plane epitaxial relationship between epsilon-Ga2O3 films and 6H-SiC substrates is confirmed to be epsilon-Ga2O3 (0001)//6H-SiC (0001), and the in-plane epitaxial relationship is also confirmed to be epsilon-Ga2O3 < 11 (2) over bar0 >//6H-SiC < 11 (2) over bar0 >. The SEM and AFM images show that the epsilon-Ga2O3 films are uniform and flat. The epsilon-Ga2O3 films are thermally stable up to approximately 800 degrees C and begin to transform into beta-phase Ga2O3 at 850 degrees C. Then, they are completely converted to beta-Ga2O3 films under 900 degrees C. The high-quality epsilon-Ga2O3 films with hexagonal structure have potential application in the optoelectronic field. Published by AIP Publishing.
引用
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页数:5
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