Elemental composition and electrical properties of (a-C:H):Cu films prepared by magnetron sputtering

被引：17
|
作者：
Zvonareva, TK
Lebedev, VM
Polyanskaya, TA
Sharonova, LV
Ivanov-Omskii, VI
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, BP Konstantinov Nucl Phys Inst, Gatchina 188850, Russia
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 09期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1309430
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Amorphous hydrogenated carbon films with varied copper concentration were prepared by dc co-sputtering of graphite and copper targets in an argon-hydrogen atmosphere. The relative atomic concentrations of carbon, copper, and oxygen were determined using proton Rutherford backscattering and the method of nuclear reactions. The dc conductivity of the films was studied in the in-plane and transverse geometries. The conductivity data are discussed in terms of the model of a medium in the form of a dielectric matrix containing two types of conducting inclusions in the form of graphite-like and copper nanoclusters. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：1094 / 1099
页数：6
相关论文
共 50 条
  • [1] Elemental composition and electrical properties of (a-C:H):Cu films prepared by magnetron sputtering
    T. K. Zvonareva
    V. M. Lebedev
    T. A. Polyanskaya
    L. V. Sharonova
    V. I. Ivanov-Omskii
    Semiconductors, 2000, 34 : 1094 - 1099
  • [2] Scanning tunneling spectroscopy of a-C:H and a-C:(H, Cu) films prepared by magnetron sputtering
    Zvonareva, TK
    Ivanov-Omskii, VI
    Rozanov, VV
    Sharonova, LV
    SEMICONDUCTORS, 2001, 35 (12) : 1398 - 1403
  • [3] Scanning tunneling spectroscopy of a-C:H and a-C:(H, Cu) films prepared by magnetron sputtering
    T. K. Zvonareva
    V. I. Ivanov-Omskii
    V. V. Rozanov
    L. V. Sharonova
    Semiconductors, 2001, 35 : 1398 - 1403
  • [4] Growth of a-C:H and a-C:H⟨Cu⟩ films produced by magnetron sputtering
    Zvonareva, TK
    Ivanov-Omskii, VI
    Nashchekin, AV
    Sharonova, LV
    SEMICONDUCTORS, 2000, 34 (01) : 98 - 103
  • [5] Growth of a-C:H and a-C:H〈Cu〉 films produced by magnetron sputtering
    T. K. Zvonareva
    V. I. Ivanov-Omskii
    A. V. Nashchekin
    L. V. Sharonova
    Semiconductors, 2000, 34 : 98 - 103
  • [6] The properties of a-C:H(Al, W) films prepared by medium frequency magnetron sputtering
    Hao, J.-Y. (jyhao@licp.cas.cn), 2013, Science Press (33):
  • [7] Hardness, intrinsic stress, and structure of the a-C and a-C:H films prepared by magnetron sputtering
    Kulikovsky, V
    Bohac, P
    Franc, F
    Deineka, A
    Vorlicek, V
    Jastrabik, L
    DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 1076 - 1081
  • [8] Corrosion and wear resistance of SiC:Cu:a-C composite films prepared by magnetron sputtering
    Zhang, Jianhui
    Cao, Xiu
    Jiang, Aihua
    Ru, Lu
    Tao, Simin
    Xiao, Jianrong
    SURFACE & COATINGS TECHNOLOGY, 2023, 464
  • [9] Electrical and thermal properties of Cu-Ta films prepared by magnetron sputtering
    Qin, Wen
    Fu, Licai
    Zhu, Jiajun
    Yang, Wulin
    Sang, Jianquan
    Li, Deyi
    Zhou, Lingping
    APPLIED SURFACE SCIENCE, 2018, 443 : 97 - 102
  • [10] Evaluation of phase, composition, microstructure and properties in TiC/a-C:H thin films deposited by magnetron sputtering
    Gulbinski, W
    Mathur, S
    Shen, H
    Suszko, T
    Gilewicz, A
    Warcholinski, B
    APPLIED SURFACE SCIENCE, 2005, 239 (3-4) : 302 - 310
12345