In this work, the Co/Ni-free Na2/3Mn0.8Fe0.1Mg0.1O2 has been synthesized and investigated as low-cost and high-Mn content layered oxide cathode material for sodium-ion batteries by x-ray diffraction and electrochemical techniques. Due to a larger ionic size of Mg2+ than of Fe3+, the lattice parameters a and c both increase and the Mg2+ doping results in an expanded space for sodium-ion diffusion with the improved diffusion coefficient of sodium ion compared with Na2/3Mn0.8Fe0.2O2. Na2/3Mn0.8Fe0.1Mg0.1O2 delivers a high initial discharge capacity of 168 mAh g(-1), and great rate capabilities of 102, 80, and 55 mAh g(-1) at high rates of 2 C, 5 C, and 10 C. Mg2+ doping also can alleviate the Jahn-Teller effect by Mn3+ and stabilize the crystal structure, thus enhancing the cyclic stability of Na2/3Mn0.8Fe0.1Ti0.1O2 with about 90% capacity retention at 0.1 C. Electrochemical inactive and low-cost Mg-ion doping is an effective approach to improve the layered oxide cathode materials for sodium-ion batteries.
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Indian Inst Sci, Mat Res Ctr, Faraday Mat Lab, CV Raman Ave, Bangalore 560012, Karnataka, IndiaIndian Inst Sci, Mat Res Ctr, Faraday Mat Lab, CV Raman Ave, Bangalore 560012, Karnataka, India
Barpanda, Prabeer
;
Lander, Laura
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Univ Tokyo, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan
Kyoto Univ, ESICB, Nishikyo Ku, Kyoto 6158245, JapanIndian Inst Sci, Mat Res Ctr, Faraday Mat Lab, CV Raman Ave, Bangalore 560012, Karnataka, India
Lander, Laura
;
Nishimura, Shin-ichi
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Univ Tokyo, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan
Kyoto Univ, ESICB, Nishikyo Ku, Kyoto 6158245, JapanIndian Inst Sci, Mat Res Ctr, Faraday Mat Lab, CV Raman Ave, Bangalore 560012, Karnataka, India
Nishimura, Shin-ichi
;
Yamada, Atsuo
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Univ Tokyo, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan
Kyoto Univ, ESICB, Nishikyo Ku, Kyoto 6158245, JapanIndian Inst Sci, Mat Res Ctr, Faraday Mat Lab, CV Raman Ave, Bangalore 560012, Karnataka, India
机构:
Indian Inst Sci, Mat Res Ctr, Faraday Mat Lab, CV Raman Ave, Bangalore 560012, Karnataka, IndiaIndian Inst Sci, Mat Res Ctr, Faraday Mat Lab, CV Raman Ave, Bangalore 560012, Karnataka, India
Barpanda, Prabeer
;
Lander, Laura
论文数: 0引用数: 0
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机构:
Univ Tokyo, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan
Kyoto Univ, ESICB, Nishikyo Ku, Kyoto 6158245, JapanIndian Inst Sci, Mat Res Ctr, Faraday Mat Lab, CV Raman Ave, Bangalore 560012, Karnataka, India
Lander, Laura
;
Nishimura, Shin-ichi
论文数: 0引用数: 0
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机构:
Univ Tokyo, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan
Kyoto Univ, ESICB, Nishikyo Ku, Kyoto 6158245, JapanIndian Inst Sci, Mat Res Ctr, Faraday Mat Lab, CV Raman Ave, Bangalore 560012, Karnataka, India
Nishimura, Shin-ichi
;
Yamada, Atsuo
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tokyo, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan
Kyoto Univ, ESICB, Nishikyo Ku, Kyoto 6158245, JapanIndian Inst Sci, Mat Res Ctr, Faraday Mat Lab, CV Raman Ave, Bangalore 560012, Karnataka, India