Thermal etching of 6H-SiC substrate surface

被引：9

作者：

Nishiguchi, T ^{[1
]}

Ohshima, S ^{[1
]}

Nishino, S ^{[1
]}

机构：

[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 4A期

关键词：

SiC; thermal etching; substrate preparation; crystal orientation; atmospheric gas;

D O I：

10.1143/JJAP.42.1533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal etching was investigated as one of the methods of obtaining atomically flat surfaces of SiC substrates. The formation of a graphite layer on substrate surface was suppressed by reducing the C/Si ratio in the vapor phase. Although (11 (2) over bar0) substrates etched in argon atmosphere had round pits on their surface, such pits were not observed and an atomically flat surface with an RMS roughness of approximately 0.3 nm was obtained in nitrogen atmosphere even at the high etching rate of 250 mum/h. The substrates with higher nitrogen concentrations had both higher surface flatness and higher etching rate. The thermal etching method was found to be an effective technique for obtaining the flat surface of SiC substrates that is suitable for crystal growth and/or device fabrication. The etching mechanisms of (0001) and (11 (2) over bar0) surfaces were compared, and the result was discussed by taking into consideration the bond configuration on the surface.

引用

页码：1533 / 1537

页数：5

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