Fabrication and characterization of Co-ferrite thin films for a ferromagnetic barrier in a spin-filtering device operating at room temperature

被引：0

作者：

Goto, R. ^{[1
]}

Takahashi, Y. K.

Tezuka, N.

Inomata, K.

Sugimoto, S.

Hono, K.

机构：

[1] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2007年 / 43卷 / 06期

关键词：

Co-ferrite; spintronics; spin-filtering devices; spin-polarized current sources; MAGNETORESISTANCE; POLARIZATION;

D O I：

10.1109/TMAG.2007.893696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe2 surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe2/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed.

引用

页码：2797 / 2799

页数：3

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