Dynamical electron capture in the scattering of swift hydrogen ions on a Si surface

被引：18
作者：
Maazouz, M [1 ]
Guillemot, L [1 ]
Esaulov, VA [1 ]
机构：
[1] UNIV PARIS 11,COLLIS ATOM & MOL LAB,CNRS,UNITE ASSOCIEE,F-91405 ORSAY,FRANCE
来源：
PHYSICAL REVIEW B | 1997年 / 56卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.56.9267
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present the results of a study of H-formation in collisions of 1-4 keV hydrogen ions with a Si surface. Measurements of scattered negative ion fractions are reported. These are found to be of the same magnitude as for clean metal surfaces like Al. A dynamic velocity-dependent effect in electron capture is observed. A velocity-dependent, nonresonant, charge-transfer process involving localized dangling-bond surface states is invoked to explain this observation.
引用
收藏
页码：9267 / 9270
页数：4
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