Very low-loss distributed X-band and Ka-band MEMS phase shifters using metal-air-metal capacitors

被引:97
作者
Hayden, JS [1 ]
Rebeiz, GA [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Radiat Lab, Ann Arbor, MI 48109 USA
关键词
microelectromechanical system (MEMS); microwave; phase shifter; switches; true-time delay;
D O I
10.1109/TMTT.2002.806520
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
2-bit wide-band distributed coplanar-waveguide phase shifters have been developed on a 500-mum quartz substrate for X- and Ka-band operation. The designs utilize microelectromechanical system (MEMS) switches in a distributed MEMS transmission line periodically loaded by MEMS switches and high Q (greater than or equal to 250 at 30 GHz) metal-air-metal capacitors. The MEMS switches are actuated by a +/-20-V voltage waveform using a high-resistance bias line. Estimated spring constant and switching time is 30 N/m and 9 mus, respectively. The Ka-band 2-bit design results in a reflection coefficient better than -11.5 dB, an average insertion loss of -1.5 dB and phase shifts of 0degrees, 89degrees, 180degrees, and 270degrees at 37.7 GHz. The X-band 2-bit design results in a reflection coefficient better than -12.5 dB, an average insertion loss of -1.2 dB and phase shifts of 0degrees, 94degrees, 176degrees, and 270degrees at 13.6 GHz. These results are very competitive with switched transmission-line and reflection-based phase shifters. The distributed design can be easily scaled to V- and W-band frequencies for wide-band low-loss performance.
引用
收藏
页码:309 / 314
页数:6
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