Nonequilibrium carrier recombination in highly excited bulk SiC crystals

被引：6

作者：

Jarasiunas, K. ^{[1
]}

Scajev, P. ^{[1
]}

Gudelis, V. ^{[1
]}

Klein, P. B. ^{[2
]}

Kato, M. ^{[1
,3
]}

机构：

[1] Vilnius Univ, Inst Appl Res, Sauletekio Ave 9-3, LT-10222 Vilnius, Lithuania

[2] US Naval, Res Lab, Washington, DC 20375 USA

[3] Nagoya Inst Technol, Dept Engn Phys Elect & Mec, Nagoya, Aichi 4668555, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

free carrier absorption; bimolecular and Auger recombination; cubic and hexagonal SiC;

D O I：

10.4028/www.scientific.net/MSF.645-648.215

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

We applied time-resolved free carrier absorption (FCA) to monitor non-equilibrium carrier dynamics in 4H epilayers and 3C SiC bulk crystals at excess carrier densities in the Delta N = 10(17) - 10(19) cm(-3) range. The numerical fitting of FCA decay kinetics provided the linear and nonlinear carrier recombination rates in the 40-390 K range and the absorption cross-sections sigma(eh) at 1064 nm. In 4H, the decrease of the bulk lifetime (800 us) with excitation provided the bimolecular and Auger coefficients B=(1.2 +/- 0.4)x10(-12) cm(3)/s and C=(7 +/- 4)x10(-31) cm(6)/s, respectively, at room temperature. These values for 3C were 55-150 us, (2.0 +/- 0.4)x10(-12) cm(3)/s, and (2 +/- 1)x10(-32) cm(6)/s, respectively. The rate of linear and nonlinear recombination increased at lower temperatures. A value of sigma(eh) =44x10(-18) cm(2) for 3C SiC at 1.064 mu m was found 2.3 times smaller than that for 4H SiC.

引用

页码：215 / +

页数：2

共 5 条

[1] Auger recombination in 4H-SiC: Unusual temperature behavior [J].

Galeckas, A ;

Linnros, J ;

Grivickas, V ;

Lindefelt, U ;

Hallin, C .

APPLIED PHYSICS LETTERS, 1997, 71 (22) :3269-3271

[2] Carrier lifetime measurement in n- 4H-SiC epilayers [J].

Klein, P. B. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)

[3] The minority carrier lifetime of n-type 4H- and 6H-SiC epitaxial layers [J].

Kordina, O ;

Bergman, JP ;

Hallin, C ;

Janzen, E .

APPLIED PHYSICS LETTERS, 1996, 69 (05) :679-681

[4] Heteroepitaxial growth and characteristics of 3C-SiC on large-diameter Si(001) substrates [J].

Nagasawa, H ;

Kawahara, T ;

Yagi, K .

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :319-322

[5] The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique [J].

Neimontas, K. ;

Malinauskas, T. ;

Aleksiejunas, R. ;

Sudzius, M. ;

Jarasiunas, K. ;

Storasta, L. ;

Bergman, J. P. ;

Janzen, E. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (07) :952-958

← 1 →