Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGeAsSb lasers emitting at 2.05 μm

被引：114

作者：

Turner, GW ^{[1
]}

Choi, HK ^{[1
]}

Manfra, MJ ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02173 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.120922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strained single-quantum-well, broadened-waveguide GaInAsSb/AlGaAsSb diode lasers have exhibited room-temperature threshold current densities as low as 50 A/cm(2), one of the lowest values reported for diode lasers at room temperature, These lasers, grown by molecular beam epitaxy, have emission wavelengths of similar to 2.05 mu m, characteristic temperature of 65 K, internal quantum efficiency of 95%, and internal loss coefficient of 7 cm(-1). Single-ended cw power of 1 W is obtained for a 100-mu m aperture. (C) 1998 American Institute of Physics.

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页码：876 / 878

页数：3

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