GaAsN and GaInAsN/GaAs quantum wells grown on {111} substrates:: growth conditions and optical properties

被引：8

作者：

Blanc, S ^{[1
]}

Arnoult, A ^{[1
]}

Carrère, H ^{[1
]}

Fontaine, C ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期

关键词：

III-V semiconductors; dilute nitrides; {111} orientation; molecular beam epitaxy; photoluminescence; SIMS;

D O I：

10.1016/S1386-9477(02)00787-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaAsN and GaInAsN have been grown on As(B)- and Ga(A)-rich {1 1 1} substrates by molecular beam epitaxy. N incorporation has been found to be highly dependent on the substrate orientation. The influence of growth conditions on optical properties of (1 1 1)A and (1 1 1)B oriented GaAsN quantum wells has been determined. The better orientation appears to be the Ga-rich one for GaAsN and GaInAsN/GaAs wells. (C) 2002 Published by Elsevier Science B.V.

引用

页码：252 / 254

页数：3