Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures: Role of Coulomb interaction, Degeneracy, and Boundary Condition

被引：0
|
作者：
Nakanishi, Kohei [1 ]
Uechi, Tadayoshi [1 ]
Sano, Nobuyuki [1 ]
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
来源：
2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING | 2009年
关键词：
PART I; PERFORMANCE; MOSFET; DRAIN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The self-consistent 3D Monte Carlo device simulator including the full Coulomb interaction is constructed. We demonstrate that the boundary condition for the electron distribution function plays an essential role to obtain correct transport characteristics and that the Coulomb interaction is indeed a key ingredient for reliable predictions of device properties.
引用
收藏
页码：71 / 74
页数：4
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