Temperature-Dependent Polarized Photoluminescence from c-plane InGaN/GaN Multiple Quantum Wells Grown on Stripe-Shaped Cavity-Engineered Sapphire Substrate

被引：1
作者：
Kim, Jongmyeong [1 ]
Park, Seoung-Hwan [2 ]
Ahn, Doyeol [3 ]
Yoon, Euijoon [1 ,4 ,5 ]
机构：
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[2] Catholic Univ Daegu, Dept Elect Engn, Gyeongbuk 38430, South Korea
[3] Univ Seoul, Dept Elect & Comp Engn, Seoul 02504, South Korea
[4] Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea
[5] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2020年 / 257卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
anisotropic strain; c-plane InGaN; GaN MQWs; k center dot p perturbation theory; polarized photoluminescence; temperature dependence; OPTICAL GAIN; GAN; STRAIN;
D O I：
10.1002/pssb.201900526
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Temperature-dependent polarized photoluminescence from anisotropically strained c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate is theoretically and experimentally investigated. Polarization ratios decrease from 0.98 to 0.74, and emission peak shifts increase from 0 to 50.9 meV with increasing temperature from 10 to 300 K, respectively. Theoretical calculations based on k center dot p perturbation theory reveal that the temperature dependence of polarized optical behaviors is attributed to the modified valence band structures and hole distributions in each subband. Theoretical results are in good agreement with the experimental results over temperature range from 10 to 300 K, providing in-depth understanding for the strain-induced valence band modification of III-nitride semiconductors.
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页数：6
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