P-type conduction in two-dimensional MoS2 via oxygen incorporation

被引：77

作者：

Neal, Adam T. ^{[1
,2
]}

Pachter, Ruth ^{[1
]}

Mou, Shin ^{[1
]}

机构：

[1] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[2] Univ Technol Corp, Dayton, OH 45432 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 19期

关键词：

FIELD-EFFECT TRANSISTORS; TRANSITION-METAL DICHALCOGENIDES; SINGLE-LAYER MOS2; MOLYBDENUM-DISULFIDE; MONOLAYER MOS2; GROWTH; PHOTOLUMINESCENCE; TRANSPORT; VACANCIES; MOBILITY;

D O I：

10.1063/1.4983092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of oxygen incorporation on the electronic transport properties of two-dimensional (2D) MoS2 have been studied via temperature dependent and gate voltage dependent transport measurements of physical vapor deposited 2D MoS2. Gated micro-van der Pauw cross devices were fabricated from the MoS2 film for transport measurements. Field-effect measurements indicate that incorporated oxygen acts as a p-type dopant for MoS2. The combination of X-ray photoemission spectroscopy surface analysis and Raman measurements the film indicates that acceptor states resulting from MoSxO3-x inclusions in the MoS2 film are the origin of the p-type doping. Temperature dependent van der Pauw conductivity measurements indicate an acceptor energy of 214 meV above the valence band edge for the acceptor state.

引用

页数：5

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