Preparation and characterization of tin diselenide thin film by spray pyrolysis technique

被引：40
作者：
Amalraj, L
Jayachandran, M
Sanjeeviraja, C [1 ]
机构：
[1] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
[2] VHNSN Coll, Dept Phys, Virudunagar 626001, India
[3] Cent Electrochem Res Inst, Karaikkudi 630006, Tamil Nadu, India
来源：
MATERIALS RESEARCH BULLETIN | 2004年 / 39卷 / 14-15期
关键词：
thin films;
D O I：
10.1016/j.materresbull.2004.08.006
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tin diselenide (SnSe2) thin film is deposited on to non-conducting glass substrate by spray pyrolysis technique at an optimized substrate temperature of 523 K. Hot probe method is used to identify the type of conductivity of the film to be an n-type semiconductor. X-ray diffraction study reveals the polycrystalline nature of the film with a preferential orientation growth. Spherical shaped grains with an average diameter of 233 nm are observed from the SEM photograph. The elemental composition on the surface of the film is analyzed with EDAX spectrum and formed almost in stoichiometric in composition. Room temperature resistivity of 1.27 x 10(4) Omega cm is determined using the linear four-probe method. Activation energy of 0.058 eV is determined by studying the variation of resistivity of the film with temperature. Optical absorption spectrum of this sprayed SnSe2 thin film is analyzed and found to have a direct allowed transition with a band gap of 1.48 eV. (C) 2004 Elsevier Ltd. All rights reserved.
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收藏
页码：2193 / 2201
页数：9
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